Title :
Improvement of P-channel SOI LDMOS transistor by adapting a new tapered oxide technique
Author :
Kim, Jongdae ; Kim, Sang-Gi ; Song, Q. Sang ; Lee, Sang Yong ; Koo, Jin-Gun ; Ma, Dong Sung
Author_Institution :
Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
On-resistance of P-channel REduced SURface Field (RESURF) lateral double-diffused MOS (LDMOS) transistors has been improved by using a new tapered TEOS field oxide on the drift region of the devices. The new tapered oxidation technique provides better uniformity, less than 3%, and reproducibility. With the similar breakdown voltage (VB), at Vgs=-5.0 V, the specific on-resistance (Rsp) of the LDMOS with the tapered field oxide is about 31.5 mΩ·cm 2, while that of the LDMOS with the conventional field oxide is about Rsp=57 mΩ·cm2. The uniformities of Rsp and VB are less than 5 and 3%, respectively
Keywords :
insulating thin films; oxidation; power MOSFET; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; P-channel SOI LDMOS transistor; TEOS field oxide; breakdown voltage; drift region; lateral double-diffused MOS; reduced surface field; reproducibility; specific on-resistance; tapered oxidation technique; tapered oxide technique; CMOS process; Impurities; Intelligent structures; Laboratories; MOSFET circuits; Oxidation; Power MOSFET; Reproducibility of results; Silicon on insulator technology; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
