• DocumentCode
    1545315
  • Title

    6-MHz 2-N/m piezoresistive atomic-force microscope cantilevers with INCISIVE tips

  • Author

    Ried, Robert P. ; Mamin, H. Jonathon ; Terris, Bruce D. ; Fan, Long-Sheng ; Rugar, Daniel

  • Author_Institution
    IBM Almaden Res. Center, San Jose, CA, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    294
  • Lastpage
    302
  • Abstract
    Piezoresistive atomic force-microscope (AFM) cantilevers with lengths of 10 μm, displacement sensitivities of (ΔR/R)/A 1.1×10-5, displacement resolutions of 2×10-3 A/√Hz, mechanical response times of less than 90 ns, and stiffnesses of 2 N/m have been fabricated from a silicon-on-insulator (SOI) wafer using a novel frontside-only release process. To reduce mass, the cantilevers utilize novel inplane crystallographically defined silicon variable aspect-ratio (INCISIVE) tips with radius of curvature of 40 A. The cantilevers have been used in an experimental AFM data-storage system to read back data with an areal density of 10 Gb/cm 2. Four-legged cantilevers with both imaging and thermomechanical surface modification capabilities have been used to write 2-Gb/cm2 data at 50 kb/s on a spinning polycarbonate sample and to subsequently read the data. AFM imaging has been successfully demonstrated with the cantilevers. Some cantilever designs have sufficient displacement resolution to detect their own mechanical-thermal noise in air. The INCISIVE tips also have applications to other types of sensors
  • Keywords
    atomic force microscopy; digital storage; etching; micromachining; microsensors; noise; piezoresistive devices; semiconductor technology; sensitivity analysis; silicon-on-insulator; wear; 10 Gbit; 10 micron; 2 Gbit; 40 A; 50 kbit/s; 90 ns; AFM cantilevers; AFM data-storage system; AFM imaging; INCISIVE tips; SOI wafer; Si; Si variable aspect-ratio tips; atomic-force microscope cantilevers; crystallographically defined tips; displacement resolution; displacement sensitivity; frontside-only release process; mechanical response times; micromechanical system; piezoresistive cantilevers; sensor; spinning polycarbonate sample; stiffnesses; thermomechanical surface modification capability; Atomic force microscopy; Delay; Magnetic confinement; Memory; Piezoresistance; Piezoresistive devices; Silicon on insulator technology; Spinning; Surface topography; Thermomechanical processes;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.650125
  • Filename
    650125