Title :
Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM
Author :
Aoulaiche, Marc ; Nicoletti, Talitha ; Almeida, Luciano Mendes ; Simoen, Eddy ; Veloso, Anabela ; Blomme, Pieter ; Groeseneken, Guido ; Jurczak, Malgorzata
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Abstract :
One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.
Keywords :
electric fields; junction gate field effect transistors; random-access storage; silicon-on-insulator; UTBOX devices; body-junction electric field; junction field effect; one-transistor floating-body RAM; one-transistor floating-body random access memory; retention time; silicon-on-insulator; Current measurement; Junctions; Logic gates; Random access memory; Standards; Temperature measurement; Time measurement; Electric field; UTBOX; floating body; floating-body random access memory (RAM) (FBRAM); one-transistor RAM; recessed junctions; retention; silicon on insulator (SOI); underlap junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2200685
