Title :
Measurements of InGaAs metal-semiconductor-metal photodetector nonlinearities
Author :
Williams, Keith J. ; Esman, Ronald D. ; Williamson, Steven ; Valdmanis, Janis ; Al-hemyari, Kadhair ; Rudd, James V.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
Nonlinearity measurements of microwave-bandwidth InGaAs metal-semiconductor-metal photodetectors have been performed. The devices show nonlinear characteristics which are similar to p-i-n structures despite a less-uniform electric field within the absorbing region. The nonlinear response versus applied voltage, nonlinearity growth rate versus current, nonlinearity threshold due to high power, and 1-dB compression current measurements presented here are all comparable in magnitude to their p-i-n counterparts.
Keywords :
III-V semiconductors; frequency response; gallium arsenide; harmonic distortion; indium compounds; metal-semiconductor-metal structures; optical noise; optical receivers; photodetectors; photodiodes; 1-dB compression current measurements; 20 to 22 GHz; InGaAs; InGaAs metal-semiconductor-metal photodetector nonlinearities; absorbing region; electric field nonuniformity; frequency response; high speed photodetectors; microwave-bandwidth InGaAs MSM photodetectors; nonlinear response; nonlinearity growth; nonlinearity threshold; p-i-n structures; second harmonic level; third harmonic level; Detectors; Electrodes; Electromagnetic heating; Frequency response; Indium gallium arsenide; Microwave devices; Optical fiber communication; PIN photodiodes; Photodetectors; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
