A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

Author

Niu, Guofu ; Cressler, John D. ; Mathew, Suraj J. ; Subbanna, Seshu

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

Volume

46

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1912

Lastpage

1914

Abstract

A simple yet effective total resistance slope-based method for extracting the effective channel mobility in deep submicrometer CMOS technology is developed. Using the slope of the measured total resistance versus mask length, the series resistance is removed from the measured total resistance, and mobility is extracted without involving the effective channel length. The new method facilitates mobility extraction in situations where the effective channel length is difficult to extract, such as in lightly-doped-drain (LDD) devices or at low temperatures. The new method also allows the series resistance to be any function of the gate bias, making the mobility extraction in LDD devices easier and more accurate

Keywords

CMOS integrated circuits; ULSI; carrier mobility; integrated circuit modelling; masks; deep submicrometer CMOS technology; effective channel mobility extraction; gate bias; lightly-doped-drain devices; mask length; mobility extraction; series resistance; total resistance slope-based method; CMOS technology; Current measurement; Electrical resistance measurement; Germanium silicon alloys; Immune system; Length measurement; Microelectronics; Semiconductor device modeling; Silicon germanium; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.784194

Filename

784194