DocumentCode
1545349
Title
Surface accumulated lateral npn BJT´s characteristics in SOI NMOSFETs
Author
Kook, Youn-Jae ; Lee, Jong-Ho ; Park, Young-June ; Min, Hong-Shick
Author_Institution
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
46
Issue
9
fYear
1999
fDate
9/1/1999 12:00:00 AM
Firstpage
1917
Lastpage
1919
Abstract
Lateral npn bipolar junction transistors (BJTs) in SOI MOSFET structures are investigated under various gate voltages. Negative resistance caused by base resistance modulation is observed. The surface-accumulated BJT mode is superior to the MOSFET mode in transconductance-to-current ratio and output resistance. Scaling properties are also discussed together with the need for a P+ polysilicon gate
Keywords
MOSFET; ion implantation; negative resistance; silicon-on-insulator; P+ polysilicon gate; SOI NMOSFET; base resistance modulation; gate voltages; negative resistance; output resistance; surface accumulated lateral npn BJT; surface-accumulated BJT mode; transconductance-to-current ratio; Analog circuits; Doping; Fabrication; Immune system; MOSFET circuits; Semiconductor films; Silicon; Surface resistance; Voltage; Wafer bonding;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.784196
Filename
784196
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