Title :
Surface accumulated lateral npn BJT´s characteristics in SOI NMOSFETs
Author :
Kook, Youn-Jae ; Lee, Jong-Ho ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
9/1/1999 12:00:00 AM
Abstract :
Lateral npn bipolar junction transistors (BJTs) in SOI MOSFET structures are investigated under various gate voltages. Negative resistance caused by base resistance modulation is observed. The surface-accumulated BJT mode is superior to the MOSFET mode in transconductance-to-current ratio and output resistance. Scaling properties are also discussed together with the need for a P+ polysilicon gate
Keywords :
MOSFET; ion implantation; negative resistance; silicon-on-insulator; P+ polysilicon gate; SOI NMOSFET; base resistance modulation; gate voltages; negative resistance; output resistance; surface accumulated lateral npn BJT; surface-accumulated BJT mode; transconductance-to-current ratio; Analog circuits; Doping; Fabrication; Immune system; MOSFET circuits; Semiconductor films; Silicon; Surface resistance; Voltage; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
