A discussion on the universality of inversion layer mobility in MOSFET´s

An obvious discrepancy exists in published research results concerning the universality of MOS inversion layer electron mobility in nonuniform substrate doping profile cases. By thorough analysis of the data and the parameter extraction method, it is demonstrated that the discrepancy is simply due to the different definition of depletion layer charge and the invalid extraction of parameters from experimental data. Studies in this work show that inversion layer carrier mobility experiences the same universality feature in nonuniform doping substrates as in uniform ones