DocumentCode :
1545403
Title :
The Noise Performance of Electron-Multiplying Charge-Coupled Devices at Soft X-Ray Energy Values
Author :
Tutt, James H. ; Holland, Andrew D. ; Murray, Neil J. ; Hall, David J. ; Harriss, Richard D. ; Clarke, Andrew ; Evagora, Anthony M.
Author_Institution :
Centre for Electron. Imaging, Planetary Space Sci. Res. Inst., Open Univ., Milton Keynes, UK
Volume :
59
Issue :
8
fYear :
2012
Firstpage :
2192
Lastpage :
2198
Abstract :
The use of electron-multiplying charge-coupled devices (CCDs) for high-resolution soft X-ray spectroscopy has been proposed in previous studies, and the analysis that followed experimentally identified and verified a modified Fano factor for X-ray detection using an 55Fe X-ray source. However, further experiments with soft X-rays at 1000 eV were less successful, attributed to excessive split events. More recently, through the use of deep-depletion e2v CCD220 and on-chip binning, it has been possible to greatly reduce the number of split events, allowing the result for the modified Fano factor at soft X-ray energy values to be verified. This paper looks at the earlier attempt to verify the modified Fano factor at 1000 eV with e2v CCD97 and shows the issues created by splitting of the charge cloud between pixels. It then compares these earlier results with new data collected using e2v CCD220, investigating how split-event reduction allows the modified Fano factor to be verified for low-energy X-rays.
Keywords :
X-ray detection; X-ray spectroscopy; charge-coupled devices; electron multiplier detectors; noise; 55Fe X-ray source; CCD; X-ray detection; charge cloud; deep-depletion e2v CCD220; electron volt energy 1000 eV; electron-multiplying charge-coupled devices; high-resolution soft X-ray spectroscopy; low-energy X-rays; modified Fano factor; noise performance; on-chip binning; soft X-ray energy values; split events; Charge coupled devices; Clocks; Dark current; Electric potential; Noise; Photonics; Silicon; Charge-coupled device (CCD); Fano factor; X-ray; electron-multiplying (EM)-CCD; excess noise factor; modified Fano factor;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2200488
Filename :
6221977
Link To Document :
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