• DocumentCode
    1545403
  • Title

    The Noise Performance of Electron-Multiplying Charge-Coupled Devices at Soft X-Ray Energy Values

  • Author

    Tutt, James H. ; Holland, Andrew D. ; Murray, Neil J. ; Hall, David J. ; Harriss, Richard D. ; Clarke, Andrew ; Evagora, Anthony M.

  • Author_Institution
    Centre for Electron. Imaging, Planetary Space Sci. Res. Inst., Open Univ., Milton Keynes, UK
  • Volume
    59
  • Issue
    8
  • fYear
    2012
  • Firstpage
    2192
  • Lastpage
    2198
  • Abstract
    The use of electron-multiplying charge-coupled devices (CCDs) for high-resolution soft X-ray spectroscopy has been proposed in previous studies, and the analysis that followed experimentally identified and verified a modified Fano factor for X-ray detection using an 55Fe X-ray source. However, further experiments with soft X-rays at 1000 eV were less successful, attributed to excessive split events. More recently, through the use of deep-depletion e2v CCD220 and on-chip binning, it has been possible to greatly reduce the number of split events, allowing the result for the modified Fano factor at soft X-ray energy values to be verified. This paper looks at the earlier attempt to verify the modified Fano factor at 1000 eV with e2v CCD97 and shows the issues created by splitting of the charge cloud between pixels. It then compares these earlier results with new data collected using e2v CCD220, investigating how split-event reduction allows the modified Fano factor to be verified for low-energy X-rays.
  • Keywords
    X-ray detection; X-ray spectroscopy; charge-coupled devices; electron multiplier detectors; noise; 55Fe X-ray source; CCD; X-ray detection; charge cloud; deep-depletion e2v CCD220; electron volt energy 1000 eV; electron-multiplying charge-coupled devices; high-resolution soft X-ray spectroscopy; low-energy X-rays; modified Fano factor; noise performance; on-chip binning; soft X-ray energy values; split events; Charge coupled devices; Clocks; Dark current; Electric potential; Noise; Photonics; Silicon; Charge-coupled device (CCD); Fano factor; X-ray; electron-multiplying (EM)-CCD; excess noise factor; modified Fano factor;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2200488
  • Filename
    6221977