Title :
32 Gbit/s super-dynamic decision IC using 0.13 μm GaAs MESFETs with multilayer-interconnection structure
Author :
Otsuji, T. ; Murata, K. ; Tokumitsu, M. ; Sugitani, S.
Author_Institution :
NTT Syst. Electron. Lab., Kanagawa, Japan
fDate :
3/13/1997 12:00:00 AM
Abstract :
The authors report on a super-dynamic decision IC using 0.13 μm gate-length GaAs MESFETs. Using a combination of high-speed circuit and device technologies together with a multilayer interconnection structure, 32 Gbit/s decision operation was achieved
Keywords :
III-V semiconductors; MESFET integrated circuits; decision circuits; gallium arsenide; integrated circuit interconnections; 0.13 micron; 32 Gbit/s; GaAs; GaAs MESFET; high-speed circuit; multilayer interconnection; super-dynamic decision IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970323
