Title :
Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers
Author :
Zhang, G. ; Ovtchinnikov, A. ; Nappi, J. ; Smekalin, K. ; Savolainen, P. ; Pessa, M. ; Asonen, H.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
3/13/1997 12:00:00 AM
Abstract :
The authors have optimised the layer structure of 980 nm Al-free InGaAs/GaInAsP/GaInP SCH-QW lasers to have narrow vertical far-field pattern, high efficiency and low loss for power operation. It has been found that the internal loss decreases with any increase in the bandgap of the GaInAsP confinement layers, any the internal quantum efficiency has a maximum value for the GaInAsP having a bandgap of ~1.7 eV. It is indicated that the laser structure, having a single quantum well and 200 nm thick GaInAsP confinement layers, is the best choice for high power operation based on the narrow vertical far-field angle, high efficiency and low loss
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; 980 nm; InGaAs-GaInAsP-GaInP; InGaAs/GaInAsP/GaInP SCH quantum well laser; bandgap; confinement layer; internal loss; internal quantum efficiency; layer structure; power operation; vertical far-field pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970342
