DocumentCode :
1545694
Title :
Triangular shaped waveguide diode ring laser fabricated using Cl 2 RIBE in InP/InGaAsP
Author :
Ji, Chen ; Leary, M. ; Ballantyne, J.M.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume :
33
Issue :
6
fYear :
1997
fDate :
3/13/1997 12:00:00 AM
Firstpage :
493
Lastpage :
494
Abstract :
A triangular shaped ridge waveguide diode ring laser is fabricated in InP/InGaAsP. The laser facets are etched using Cl2 RIBE. The device lases at 1.21 μm under room temperature pulsed testing
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; ridge waveguides; ring lasers; semiconductor lasers; sputter etching; waveguide lasers; 1.21 micrometre; Cl2; InP-InGaAsP; RIBE; diode ring laser; laser facets; optical transmitters; ridge waveguide; room temperature pulsed testing; semiconductor lasers; triangular shaped waveguide;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970351
Filename :
585061
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1545694
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