Title :
Fundamental and Dynamic Properties of Intermixed InGaAs-InGaAsP Quantum-Well Lasers
Author :
Chen, Cheng ; Djie, Hery Susanto ; Ding, Yun Hsiang ; Ooi, Boon Siew ; Hwang, James C M ; Aimez, Vincent
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
The fundamental and dynamic properties of InGaAs-InGaAsP lasers, where emission wavelengths were blue-shifted by quantum-well intermixing through ion implantation and annealing, were investigated to assess possible degradation by intermixing. It was found that the fundamental properties such as threshold current and slope efficiency were largely unchanged even after as much as 120 nm of wavelength shift. Meanwhile, the dynamic properties such as modulation efficiency and K factor were degraded after just a moderate degree of intermixing, but the degradation was not worsened by further intermixing. Provided the finite degradation of dynamic properties is tolerable, the present intermixing technique will be very useful for the fabrication of photonic integrated circuits.
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; ion implantation; quantum well lasers; semiconductor quantum wells; spectral line shift; InGaAs-InGaAsP; K factor; annealing; blue-shift; ion implantation; laser threshold current; modulation efficiency; photonic integrated circuits; quantum-well intermixing; quantum-well lasers; slope efficiency; Annealing; Degradation; Indium phosphide; Ion implantation; Laser modes; Optical design; Optical device fabrication; Quantum well lasers; Semiconductor laser arrays; Threshold current; Dynamic response; gain measurement; ion implantation; optical modulation; quantum wells; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2047939