Title :
AlInAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)
Author :
Cheng, Shiou-Ying ; Lin, Po-Hung ; Wang, Wei-Chou ; Chen, Jing-Yuh ; Liu, Wen-Chau ; Lin, Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/13/1997 12:00:00 AM
Abstract :
A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the resonant tunnelling through the superlattice region is obtained at 77 K
Keywords :
aluminium compounds; 77 K; AlInAs-InGaAs; NDR phenomenon; RTT; i-AlInAs/n-InGaAs superlattice; long-period-superlattice; negative-differential-resistance; resonant-tunnelling transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970291
