Title :
Highly sensitive MOSFET gas sensors with porous platinum gate electrode
Author :
Seo, H. ; Endoh, T. ; Fukuda, H. ; Nomura, S.
Author_Institution :
Fac. of Eng., Muroran Inst. of Technol., Hokkaido, Japan
fDate :
3/13/1997 12:00:00 AM
Abstract :
Novel gas sensing devices based on a porous platinum (Pt) metal-oxide-semiconductor field-effect transistor (MOSFET) have been fabricated. The catalytic properties of the porous Pt surface for hydrogen (H2) enhance the gas detection sensitivity of the MOSFET gas sensor. The threshold voltage decreases rapidly as time increases when the device is exposed to H2 gas. It was possible to detect 22 ppm of H, gas with a response time of <2 min at a device temperature of 27°C. The gas sensitivity could be enhanced to ~10 times higher than that of an unmodified Pt surface
Keywords :
MOSFET; gas sensors; platinum; porous materials; sensitivity; 2 min; 27 C; H2; H2 gas; MOSFET gas sensors; Pt; catalytic properties; gas detection sensitivity; highly sensitive gas sensors; porous Pt gate electrode; porous Pt surface; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970327
