• DocumentCode
    1545869
  • Title

    Highly sensitive MOSFET gas sensors with porous platinum gate electrode

  • Author

    Seo, H. ; Endoh, T. ; Fukuda, H. ; Nomura, S.

  • Author_Institution
    Fac. of Eng., Muroran Inst. of Technol., Hokkaido, Japan
  • Volume
    33
  • Issue
    6
  • fYear
    1997
  • fDate
    3/13/1997 12:00:00 AM
  • Firstpage
    535
  • Lastpage
    536
  • Abstract
    Novel gas sensing devices based on a porous platinum (Pt) metal-oxide-semiconductor field-effect transistor (MOSFET) have been fabricated. The catalytic properties of the porous Pt surface for hydrogen (H2) enhance the gas detection sensitivity of the MOSFET gas sensor. The threshold voltage decreases rapidly as time increases when the device is exposed to H2 gas. It was possible to detect 22 ppm of H, gas with a response time of <2 min at a device temperature of 27°C. The gas sensitivity could be enhanced to ~10 times higher than that of an unmodified Pt surface
  • Keywords
    MOSFET; gas sensors; platinum; porous materials; sensitivity; 2 min; 27 C; H2; H2 gas; MOSFET gas sensors; Pt; catalytic properties; gas detection sensitivity; highly sensitive gas sensors; porous Pt gate electrode; porous Pt surface; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970327
  • Filename
    585088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1545869