Device characteristics of the GaN/InGaN-doped channel HFETs

Author

Yue-ming Hsin ; Hung-Tsao Hsu ; Chang-Cheng Chuo ; Jen-Inn Chyi

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

22

Issue

11

fYear

2001

Firstpage

501

Lastpage

503

Abstract

First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1-μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G/sub m/ around 65 mS/mm in a V/sub GS/ between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1-μm gate length have exhibited an f_T of 8 GHz and f_max of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm×1 mm device.

Keywords

III-V semiconductors; UHF field effect transistors; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; -0.65 to 2.0 V; -3.5 V; 1 micron; 1.9 GHz; 20 GHz; 8 GHz; GaN-InGaN; RF power characteristics; doped channel HFETs; drain current; gate bias; heterojunction field effect transistors; on-state breakdown voltage; pinchoff; saturated output power; small signal characteristics; Aluminum gallium nitride; Contact resistance; Electrical resistance measurement; FETs; Gallium nitride; HEMTs; MODFETs; Optical materials; RF signals; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.962643

Filename

962643