Title :
Device characteristics of the GaN/InGaN-doped channel HFETs
Author :
Yue-ming Hsin ; Hung-Tsao Hsu ; Chang-Cheng Chuo ; Jen-Inn Chyi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1-μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G/sub m/ around 65 mS/mm in a V/sub GS/ between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1-μm gate length have exhibited an fT of 8 GHz and fmax of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm×1 mm device.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; -0.65 to 2.0 V; -3.5 V; 1 micron; 1.9 GHz; 20 GHz; 8 GHz; GaN-InGaN; RF power characteristics; doped channel HFETs; drain current; gate bias; heterojunction field effect transistors; on-state breakdown voltage; pinchoff; saturated output power; small signal characteristics; Aluminum gallium nitride; Contact resistance; Electrical resistance measurement; FETs; Gallium nitride; HEMTs; MODFETs; Optical materials; RF signals; Radio frequency;
Journal_Title :
Electron Device Letters, IEEE
