Title :
Novel methods to incorporate deuterium in the MOS structures
Author :
Lee, M.H. ; Lin, C.-H. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The deuterium concentration as high as 2/spl times/10/sup 20/ cm/sup -3/ can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO/sub 2//Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9/spl times/ 10/sup 20/ cm/sup -3/, but also leads to the formation of rough oxide.
Keywords :
MIS structures; annealing; electric breakdown; elemental semiconductors; hydrogenation; interface states; oxidation; rapid thermal processing; silicon; silicon compounds; MOS structure; SiO/sub 2//Si interface state density; deuterium annealing; deuterium concentration; deuterium prebake; electrical stress; rapid thermal oxidation; soft breakdown; vacuum prebake; Annealing; Deuterium; Electric breakdown; Electrodes; Hydrogen; MOS devices; Nitrogen; Oxidation; Rapid thermal processing; Semiconductor diodes;
Journal_Title :
Electron Device Letters, IEEE
