Formation of bulk unipolar diodes in hydrogenated amorphous silicon by ion implantation

Author

Gerstner, E.G. ; Cheong, T.W.D. ; Shannon, J.M.

Author_Institution

Sch. of Electron., Comput. & Math., Surrey Univ., Guildford, UK

Volume

22

Issue

11

fYear

2001

Firstpage

536

Lastpage

538

Abstract

Bulk unipolar diodes with a wide range of barrier heights have been made in hydrogenated amorphous silicon by ion implantation. The precise concentration of dopant atoms that can be obtained when implanting into an amorphous substrate leads to accurate barrier height control. Compared with the alternative unipolar device, the Schottky diode, these devices should provide uniform, high barrier diodes for photodetectors, and very low barrier diodes for low-power, unbiased, mixers and detectors.

Keywords

amorphous semiconductors; doping profiles; elemental semiconductors; hydrogen; ion implantation; semiconductor device measurement; semiconductor diodes; silicon; I-V characteristics; Si:H; a-Si:H bulk unipolar diodes; amorphous substrate; barrier height control; barrier height range; dopant atom concentration; ion implantation; low-power unbiased detectors; low-power unbiased mixers; photodetectors; very low barrier diodes; Amorphous materials; Amorphous semiconductors; Amorphous silicon; Detectors; Ion implantation; Photodetectors; Schottky diodes; Semiconductor devices; Semiconductor diodes; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.962655

Filename

962655