• DocumentCode
    1546145
  • Title

    High performance distributed Bragg reflector microwave resonator

  • Author

    Flory, Curt A. ; Taber, Robert C.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, CA, USA
  • Volume
    44
  • Issue
    2
  • fYear
    1997
  • fDate
    3/1/1997 12:00:00 AM
  • Firstpage
    486
  • Lastpage
    495
  • Abstract
    A new resonator device structure is described that achieves Q-factors well above those currently realizable for conventional room temperature microwave structures. The new structure consists of a microwave cavity, for which the enclosure walls consist of distributed Bragg reflectors (DBR) made of low-loss sapphire. For this configuration, most of the resonant field resides in empty space, with small field strengths in the thin layers of sapphire which comprise the DBR structure. The physical structure takes the form of interpenetrating concentric rings and plates of low-loss sapphire contained in a cylindrical metal enclosure. The theoretical analysis of the DBR resonant structure allows the positions and dimensions of the component rings and plates to be precisely determined for a specified resonant frequency. The resonator Q can be accurately calculated, and plots of the resonant fields clearly show the physical mechanism leading to the observed efficiency of this resonator structure. Experimental results are given for resonators designed at 9.0 and 13.2 GHz. The measured unloaded Q´s at room temperature are over 650000 and 450000, respectively.
  • Keywords
    Q-factor; cavity resonators; dielectric resonators; 13.2 GHz; 9.0 GHz; Al/sub 2/O/sub 3/; Q-factor; cavity; cylindrical metal enclosure; distributed Bragg reflector microwave resonator; interpenetrating concentric rings; low-loss sapphire; room temperature structure; Dielectric losses; Dielectric materials; Dielectric measurements; Distributed Bragg reflectors; Microwave devices; Q factor; Resonance; Resonant frequency; Temperature;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/58.585133
  • Filename
    585133