DocumentCode
1546188
Title
Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs
Author
Daumiller, I. ; Kirchner, C. ; Kamp, M. ; Ebeling, K.J. ; Kohn, E.
Author_Institution
Dept. of Electron. Devices & Circuit, Ulm Univ., Germany
Volume
20
Issue
9
fYear
1999
Firstpage
448
Lastpage
450
Abstract
Temperature stress experiments up to 800/spl deg/C have been applied to AlGaN/GaN FET´s grown by MOVPE on sapphire and their individual technological building blocks. It was found that the temperature limit is given by the irreversible degradation of the intrinsic active heterostructure material itself during operation above 600/spl deg/C. The irreversible degradation was observed for both unconnected and electrically operated devices during temperature stress.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; junction gate field effect transistors; wide band gap semiconductors; 600 to 800 C; AlGaN-GaN; AlGaN/GaN heterostructure FET; MOVPE growth; high temperature stress; sapphire substrate; temperature stability; Aluminum gallium nitride; Degradation; Epitaxial growth; FETs; Gallium nitride; Gold; Semiconductor materials; Stability; Stress; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.784448
Filename
784448
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