Monte Carlo simulation for electron transport in MESFETs including realistic band structure of GaAs

Author

Ando, Yuji ; Contrata, Walter ; Hori, Yasuko ; Samoto, Norihiko

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Otsu, Japan

Volume

20

Issue

9

fYear

1999

Firstpage

454

Lastpage

456

Abstract

A full band Monte Carlo (FBMC) simulator was developed for electron transport in GaAs MESFETs. As a result of increased scattering rate due to the complicated band structure, the average velocity in the high field region was lower than the analytical band Monte Carlo (ABMC) result. Also, the simulated energy peak was higher than the ABMC result, due to electrons populating the upper bands. Not only due to a limited number of the first conduction band states capable of ionization, but also due to a small mass of the second conduction band, more than 95% of ionization events were shown to occur in the upper bands. The simulated ionization rate lies within the range of experimental results. To our knowledge, this is the first report on the full band two-dimensional (2-D) self-consistent GaAs MESFET simulation.

Keywords

III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; band structure; gallium arsenide; impact ionisation; semiconductor device models; GaAs; GaAs MESFET; band structure; electron transport; full band Monte Carlo simulation; ionization rate; scattering rate; two-dimensional self-consistent model; Acoustic scattering; Brillouin scattering; Electrons; Gallium arsenide; Ionization; MESFETs; Monte Carlo methods; Optical scattering; Particle scattering; Poisson equations;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.784450

Filename

784450