Title :
Amorphous silicon thin-film transistors on compliant polyimide foil substrates
Author :
Gleskova, H. ; Wagner, S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.
Keywords :
amorphous semiconductors; elemental semiconductors; foils; polymer films; silicon; substrates; thin film transistors; Si; amorphous silicon thin film transistor; compliant polyimide foil substrate; electrical characteristics; mechanical strain relief; radius of curvature; semiconductor device; Amorphous silicon; Capacitive sensors; Glass; Plasma temperature; Plastics; Polyimides; Sensor arrays; Silicon compounds; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
