Surface micromachined solenoid on-Si and on-glass inductors for RF applications

Author

Jun-Bo Yoon ; Bon-Kee Kim ; Chul-Hi Han ; Euisik Yoon ; Choong-Ki Kim

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

20

Issue

9

fYear

1999

Firstpage

487

Lastpage

489

Abstract

RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 /spl Omega//spl middot/cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-μm thick insulating layer achieves peak quality (Q-) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the narrowest-pitched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm². Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well.

Keywords

Q-factor; inductors; micromachining; solenoids; RF MEMS; Si; glass substrate; inductance; lumped circuit model; monolithic integration; passive component; quality factor; silicon substrate; solenoid on-chip inductor; surface micromachining; Circuits; Glass; Inductance; Inductors; Insulation; Q factor; Radio frequency; Silicon; Solenoids; Solid modeling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.784461

Filename

784461