Title :
High-field electron velocity in silicon surface-accumulation layers
Author :
Arnold, Emil ; Letavic, Theodore ; Herko, Sam
Author_Institution :
Philips Electron. North America Corp., Briarcliff Manor, NY, USA
Abstract :
Temperature dependence of saturation velocity in bulk silicon and in surface-accumulation layers was studied between room temperature and 600 K. The saturation electron velocity in bulk silicon was found to have a steeper temperature dependence than previously reported. The saturation velocity in surface-accumulation layers was found to be equal to the electron velocity in the bulk, and independent of the perpendicular electric field.
Keywords :
accumulation layers; electron mobility; elemental semiconductors; high field effects; silicon; 20 to 600 K; Si; high field electron velocity; saturation velocity; silicon surface accumulation layer; temperature dependence; Doping profiles; Electron mobility; MOS devices; Measurement techniques; Ohmic contacts; Resistors; Silicon; Temperature dependence; Voltage; Wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
