Title :
Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET
Author :
Lacord, Joris ; Huguenin, Jean-Luc ; Skotnicki, Thomas ; Ghibaudo, Gérard ; Boeuf, Frédéric
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
In this brief, we propose simple and analytical models for threshold voltage and subthreshold slope including short-channel and quantum effects for fully depleted or undoped double-gate MOS devices.
Keywords :
Doping; Electric potential; Electron devices; Logic gates; Numerical models; Semiconductor process modeling; Threshold voltage; Double-gate device; drain-induced barrier lowering (DIBL); short-channel effects (SCEs); subthreshold slope; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2201942
