DocumentCode :
1546564
Title :
A Transformer-Combined 31.5 dBm Outphasing Power Amplifier in 45 nm LP CMOS With Dynamic Power Control for Back-Off Power Efficiency Enhancement
Author :
Tai, Wei ; Xu, Hongtao ; Ravi, Ashoke ; Lakdawala, Hasnain ; Bochobza-Degani, Ofir ; Carley, L. Richard ; Palaskas, Yorgos
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
47
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1646
Lastpage :
1658
Abstract :
A transformer-combined fully integrated outphasing class-D PA in 45 nm LP CMOS achieves 31.5 dBm peak output power at 2.4 GHz with 27% peak PAE, and supports over 86 dB of output power range. The PA employs dynamic power control (DPC) whereby sections of the PA are turned on or off dynamically according to the instantaneous signal amplitude to reduce power dissipation, especially at back-off. Dynamic on-off switching introduces transients on the power supply that can limit performance. The paper proposes and demonstrates techniques to reduce the impact of such transients. A multi-section slab inductor based transformer combiner is used to allow individual switching of unit PAs. The PA delivers 24.8 dBm average power while meeting 64-QAM WLAN requirements. PAE is 16% when using DPC, which represents a 33% efficiency enhancement compared to the DPC-disabled mode. At lower average power of 20.5 dBm, DPC enables a 140% enhancement in average efficiency, hence increasing battery life.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; inductors; power amplifiers; power control; transformers; 64-QAM WLAN requirement; DPC; LP CMOS; back-off power efficiency enhancement; dynamic on-off switching; dynamic power control; efficiency 140 percent; efficiency 16 percent; efficiency 27 percent; frequency 2.4 GHz; instantaneous signal amplitude; multisection slab inductor based transformer; power amplifier; power dissipation reduction; power supply transient; size 45 nm; transformer-combined fully integrated outphasing class-D PA; CMOS integrated circuits; Peak to average power ratio; Power amplifiers; Power control; Power generation; Switches; CMOS PA; Class-D; OFDM; SOC; WLAN; efficiency enhancement; outphasing; power amplifier; power combining; power control; transformer;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2191674
Filename :
6222368
Link To Document :
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