Low threshold, high reliability 1.3 /spl mu/m PACIS (p-substrate Al-oxide confined inner stripe) lasers and application to laser arrays

Author

Iwai, N. ; Mukaihara, T. ; Yamanaka, N. ; Itoh, M. ; Arakawa, S. ; Shimizu, H. ; Kasukawa, A.

Author_Institution

R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

35

Issue

13

fYear

1999

fDate

6/24/1999 12:00:00 AM

Firstpage

1081

Lastpage

1082

Abstract

1.3 /spl mu/m Al-oxide confined inner stripe lasers and laser arrays on p-InP substrate (PACIS) have been fabricated as light sources for parallel data transmission. An Al/sub 0.48/In/sub 0.52/As layer lattice-matched to InP is used as the oxidised layer. A fabricated PACIS laser shows a low threshold current of 4.0 mA and a high slope efficiency of 0.6 W/A, resulting from the good current blocking characteristics of the oxidised layer. High reliability over a driving time of >4000 h at 85/spl deg/C, 5 mW has been realised. A 22-channel PACIS laser array has an average threshold current of 3.98 mA with standard deviation of 0.42 mA.

Keywords

semiconductor device reliability; 1.3 micrometre; 3.98 mA; 5 mW; 85 degC; Al/sub 0.48/In/sub 0.52/As-InP; PACIS; confined inner stripe; current blocking characteristics; driving time; laser arrays; light sources; oxidised layer; parallel data transmission; reliability; slope efficiency; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990763

Filename

784540