Title :
Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
Author :
Yang, X. ; Jurkovic, M.J. ; Heroux, J.B. ; Wang, W.I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
6/24/1999 12:00:00 AM
Abstract :
Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47 kA/cm/sup 2/ and a quantum efficiency of 0.11 W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 /spl mu/m under pulsed operation at room temperature.
Keywords :
quantum well lasers; 1.275 micrometre; InGaAsN-GaAs; broad area laser diodes; long-wavelength lasers; pulsed operation; quantum efficiency; single quantum well lasers; solid source molecular beam epitaxy; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990746
