• DocumentCode
    1546775
  • Title

    I2L: Coexistence with NMOS

  • Author

    Verhofstadt, P.

  • Author_Institution
    Fairchild Semiconductor, Mountain View, CA, USA
  • Volume
    14
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    Fairchild has applied dielectric-isolation techniques to I2L and come up with a speed- and density-enhancing version called Isoplanar integrated-injection logic, or I3L. This paper describes this latest development and compares it to the traditional I2L.
  • Keywords
    integrated logic circuits; dielectric isolation technique; isoplanar integrated injection logic circuit;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1977.6501494
  • Filename
    6501494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1546775