DocumentCode
1546786
Title
I2L: Complementing Schottky TTL
Author
Ray, William
Author_Institution
Texas Instruments
Volume
14
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
35
Lastpage
35
Abstract
In the important area of high-speed digital LSI circuits, I2L represents a higher-density complement to low-power Schottky-TTL technology. Functions requiring a circuit complexity of 500 gates or less probably could be produced economically by use of a standard low-power Schottky process. But for greater-complexity chips that operate over −55 to +125°C, I2L is needed.
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1977.6501496
Filename
6501496
Link To Document