Title :
Low noise, high efficiency L-band EDFA with 980 nm pumping
Author :
Chung, H.S. ; Lee, M.S. ; Lee, D. ; Park, N. ; DiGiovanni, D.J.
Author_Institution :
Dept. of Phys., Chungnam Nat. Univ., Taejon, South Korea
fDate :
6/24/1999 12:00:00 AM
Abstract :
Low noise figures of 3.3-3.9 dB have been achieved in flat gain L-band EDFAs over 30 nm with <1 dB gain variation. A dual-stage configuration with optimised use of backward amplified spontaneous emission is employed for low noise and high efficiency operation with only 980 nm pumping.
Keywords :
erbium; 1 dB; 980 nm; Er-doped fibre amplifiers; backward amplified spontaneous emission; dual-stage configuration; flat gain L-band EDFAs; gain variation; high efficiency operation; low noise; low noise figures; low noise high efficiency L-band EDFA; nm pumping; optimisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990750
