DocumentCode :
1546842
Title :
Demonstration of efficient p-type doping in Al/sub x/Ga/sub 1-x/N/GaN superlattice structures
Author :
Goepfert, I.D. ; Schubert, E.F. ; Osinsky, A. ; Norris, P.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
Volume :
35
Issue :
13
fYear :
1999
fDate :
6/24/1999 12:00:00 AM
Firstpage :
1109
Lastpage :
1111
Abstract :
Enhanced acceptor activation, reduced acceptor binding energy and enhanced conductivity are demonstrated in Al/sub x/Ga/sub 1-x/N/GaN doped superlattice structures. An acceptor activation energy of 58 meV is demonstrated in an Al/sub 0.20/Ga/sub 0.80/N/GaN superlattice structure with a period of 200 /spl Aring/. This value is significantly lower than the 200 meV activation energy measured in bulk GaN. The dependence of activation energy on the Al content of the superlattice is consistent with that predicted by the theoretical model. The demonstration of improved p-type doping characteristics in GaN is expected to enable the realisation of electronic and optoelectronic devices with improved properties.
Keywords :
semiconductor doping; 58 meV; AlGaN-GaN; III-V semiconductors; acceptor activation; acceptor binding energy; conductivity; optoelectronic devices; p-type doping characteristics; superlattice structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990758
Filename :
784559
Link To Document :
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