Low power GaAs current-mode 1.2 Gb/s interchip interconnections

Author

Long, Stephen I. ; Zhang, Johnny Qi

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

32

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

890

Lastpage

897

Abstract

A new GaAs current-mode (CM) chip-to-chip interconnection circuit is presented that provides high signal transfer speed with a 50 Ω active termination and reduced input voltage swing. The power dissipation is shown to be 1/8 of an ECL I/O at the same data rate, 4 mW per pin, using a standard 2 V power supply. The driver-receiver operates with a current swing under 1 mA and provides a large noise margin

Keywords

III-V semiconductors; MESFET integrated circuits; current-mode logic; direct coupled FET logic; field effect logic circuits; gallium arsenide; integrated circuit design; integrated circuit interconnections; integrated circuit noise; integrated circuit testing; multichip modules; printed circuit accessories; very high speed integrated circuits; 1.2 Gbit/s; 2 V; 2 V power supply; 4 mW; GaAs; GaAs current-mode chip-to-chip interconnection circuit; MCM applications; MESFET technology; PCB applications; current swing; directly-coupled FET logic amplifier; driver-receiver; high signal transfer speed; low power; noise margin; power dissipation; reduced input voltage swing; transient response; Distributed parameter circuits; Gallium arsenide; Impedance; Integrated circuit interconnections; Large scale integration; Logic; Power dissipation; Power transmission lines; Termination of employment; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.585291

Filename

585291