DocumentCode
1546931
Title
An SRAM cell with nonvolatile memory for programmable logic applications
Author
Wright, P.J. ; Madurawe, R.U.
Author_Institution
Dept. of Technol., Altera Corp., San Jose, CA, USA
Volume
32
Issue
6
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
918
Lastpage
919
Abstract
A memory cell has been developed and fabricated that during normal operation acts as an SRAM cell. The state of the cell can be “saved,” and at power up, the cell can be put back into that state
Keywords
CMOS memory circuits; EPROM; PLD programming; SRAM chips; programmable logic devices; FIFO SRAM cell; memory cell; nonvolatile memory; programmable logic applications; Dielectric devices; EPROM; Inverters; Logic devices; Logic gates; MOS devices; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Random access memory;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.585300
Filename
585300
Link To Document