Transient pass-transistor leakage current in SOI MOSFET´s

This paper reports an accurate method of measuring the anomalous leakage current in pass-gate MOSFET´s unique to SOI devices. A high-speed measurement setup is used to provide experimental results, and to quantify the magnitude of leakage. Particularly, great care is taken to measure only the device leakage current and not the currents due to parasitic capacitances. Systematic influences of different factors such as temperature, bias, device history, and device structure on this leakage current are experimentally established,.