A new SOI inverter using dynamic threshold for low-power applications

A new SOI inverter using the dynamic threshold (DT) that lowers threshold voltage of MOSFET only in active operation of a logic circuit is proposed for high-speed and low-power applications. The dynamic threshold scheme is realized by dynamically biasing the body of MOSFET´s. The SOI MOSFET´s have been designed and fabricated to take full advantage of the reverse body effect which is affected by many device parameters. From the measurements and simulations, the proposed scheme is shown to be useful in the buffer with large load conditions and low supply voltage if the SOI MOSFET´s are properly designed.