A new SOI inverter using dynamic threshold for low-power applications

Author

Chung, In-Young ; Park, Young June ; Min, Hong Shick

Author_Institution

Seoul Nat. Univ., South Korea

Volume

18

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

248

Lastpage

250

Abstract

A new SOI inverter using the dynamic threshold (DT) that lowers threshold voltage of MOSFET only in active operation of a logic circuit is proposed for high-speed and low-power applications. The dynamic threshold scheme is realized by dynamically biasing the body of MOSFET´s. The SOI MOSFET´s have been designed and fabricated to take full advantage of the reverse body effect which is affected by many device parameters. From the measurements and simulations, the proposed scheme is shown to be useful in the buffer with large load conditions and low supply voltage if the SOI MOSFET´s are properly designed.

Keywords

MOS logic circuits; MOSFET circuits; SPICE; circuit analysis computing; logic gates; silicon-on-insulator; threshold logic; transient analysis; MOSFET threshold voltage lowering; SOI MOSFET; SOI inverter; active logic circuit operation; buffer; dynamic threshold; dynamical biasing; high-speed applications; large load conditions; low supply voltage; low-power applications; reverse body effect; simulations; Capacitance; Circuit simulation; Emergency power supplies; Fabrication; Inverters; Logic circuits; Logic devices; MOSFET circuits; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.585343

Filename

585343