Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/

Author

Bufler, F.M. ; Graf, P. ; Meinerzhagen, B. ; Adeline, B. ; Rieger, M.M. ; Kibbel, H. ; Fischer, G.

Author_Institution

Inst. fur Theoretische Elektrotechnik und Mikroelektronik, Bremen Univ., Germany

Volume

18

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

264

Lastpage

266

Abstract

Ohmic minority and majority drift mobilities as well as saturation velocities are reported for unstrained and strained Si/sub 1-x/Ge/sub x/ alloys up to z=0.31. The electron-transport model is verified by measurements of the in-plane majority drift mobility in strained Si/sub 1-x/Ge/sub x/ samples for various dopant and Ge concentrations. Saturation velocities are determined by full-band Monte Carlo simulations. There is no substantial decrease in the mobility perpendicular to the Si/SiGe interface for doping concentrations above 10/sup 19/ cm/sup -3/ and growing x. In contrast, the saturation-drift velocity is strongly reduced with x.

Keywords

Ge-Si alloys; Monte Carlo methods; electron mobility; heterojunction bipolar transistors; high field effects; minority carriers; semiconductor device models; semiconductor doping; semiconductor materials; Ge concentration dependence; HBT modeling; Si-SiGe; Si/SiGe interface; dopant concentration dependence; electron-transport model; full-band Monte Carlo simulations; high-field electron-transport parameters; low-field electron-transport parameters; majority drift mobility; ohmic minority drift mobility; saturation-drift velocity; strained Si/sub 1-x/Ge/sub x/; unstrained Si/sub 1-x/Ge/sub x/; Doping profiles; Germanium alloys; Germanium silicon alloys; Heterojunction bipolar transistors; Phonons; Scattering parameters; Semiconductor process modeling; Silicon alloys; Silicon germanium; Solid modeling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.585350

Filename

585350