Title :
Improvement of polysilicon oxide by growing on polished polysilicon film
Author :
Lei, Tan Fu ; Cheng, Juing-Yi ; Shiau, Shyh Yin ; Chao, Tien Sheng ; Lai, Chao Sung
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/1997 12:00:00 AM
Abstract :
This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.
Keywords :
EPROM; dielectric thin films; electric breakdown; leakage currents; oxidation; polishing; semiconductor-insulator-semiconductor devices; silicon compounds; surface topography; EEPROM; EPROM; Si; Si-SiO/sub 2/-Si; charge-to-breakdown; chemical mechanical polishing; dielectric breakdown field; double-poly floating-gate structures; effective barrier height; interpolysilicon oxide; leakage current; polished polysilicon film; polysilicon oxide growth; polysilicon/polyoxide/polysilicon capacitors; surface roughness improvement; thermal growth; Chaos; Dielectric breakdown; EPROM; Leakage current; Oxidation; Rough surfaces; Silicon compounds; Slurries; Surface morphology; Surface roughness;
Journal_Title :
Electron Device Letters, IEEE
