Fast chemical sensing with metal-insulator silicon carbide structures

Author

Tobias, Peter ; Baranzahi, Amir ; Spetz, Anita Lloyd ; Kordina, Olle ; Janzén, Erik ; Lundström, Ingemar

Author_Institution

Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden

Volume

18

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

287

Lastpage

289

Abstract

It is demonstrated that the current-voltage characteristics of platinum-thin insulator silicon carbide diodes react rapidly to changes of the concentration of oxygen and hydrocarbons in the ambient already at temperatures around 500/spl deg/C-600/spl deg/C. In this letter, we use moving gas outlets to, for the first time, estimate time constants of the response in the order of a few milliseconds. The short time constants of these sensors make them suitable for applications in combustion monitoring. The new method to modulate gas concentrations rapidly at surfaces has the potential to be a valuable tool for evaluation of device structures for fast chemical sensing.

Keywords

MIS devices; Schottky diodes; combustion; gas sensors; high-temperature techniques; monitoring; platinum; silicon compounds; 500 to 600 C; MIS diodes; O/sub 2/; O/sub 2/ concentration sensitivity; Pt-TaSi-SiO/sub 2/-SiC; Pt-insulator-SiC structures; SiC; combustion monitoring; current-voltage characteristics; fast chemical sensing; gas concentration modulation; hydrocarbon concentration sensitivity; moving gas outlets; time constants; Chemical sensors; Combustion; Current-voltage characteristics; Diodes; Hydrocarbons; Insulation; Metal-insulator structures; Monitoring; Silicon carbide; Temperature sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.585361

Filename

585361