Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip

Author

Chang, L.M. ; Chang, Shoou-Jinn ; Jiao, Z.Y. ; Shen, C.F. ; Ko, Tsun-Kai ; Hon, S.J. ; Chiou, Yu-Zung ; Chiou, H.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

16

fYear

2012

Firstpage

1412

Lastpage

1414

Abstract

The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from 8.54 to 9.2 mW by adding the metallic stripe. It was also found that further the LED output power could be enhanced to 9.68 mW by partially thinning down the metallic stripe chemically. These improvements could be attributed to the more uniform current distribution across the LED chip.

Keywords

III-V semiconductors; integrated optoelectronics; light emitting diodes; wide band gap semiconductors; GaN; LED chip; current 20 mA; current distribution; current spreading; metallic stripe; power 8.54 mW; power 9.2 mW; power 9.68 mW; side-view light-emitting diodes; Gallium nitride; Gold; Light emitting diodes; Power generation; Proximity effects; Resistance; Wires; Current spreading; GaN; metallic wire; side-view LEDs;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2205236

Filename

6224171