DocumentCode :
1547285
Title :
A MOSFET-only continuous-time bandpass filter
Author :
Huang, Qiuting
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Volume :
32
Issue :
2
fYear :
1997
fDate :
2/1/1997 12:00:00 AM
Firstpage :
147
Lastpage :
158
Abstract :
A MOSFET-only filter is described which employs an amplifier-regulated cascode structure to realize both conductance and transconductance, while the required capacitors are realized by MOSFET gate capacitance. Distortion due to mobility degradation and MOSFET capacitor nonlinearity is analyzed, as is the effect of finite gain-bandwidth product of the regulating amplifiers on the filter´s linearity and high frequency performance. A prototype second-order bandpass filter has a center frequency of 560 kHz, a third-order intermodulation of -41 dB for 0 dBm input and a dynamic range of 60 dB. It consumes 2.5 mW from a 5 V supply and occupies 0.18 mm2 in a 1-μm digital CMOS technology
Keywords :
MOSFET circuits; band-pass filters; continuous time filters; harmonic distortion; 2.5 mW; 5 V; 560 kHz; MOSFET gate capacitance; MOSFET-only continuous-time bandpass filter; amplifier-regulated cascode structure; conductance; digital CMOS technology; gain-bandwidth product; high frequency characteristics; intermodulation; linearity; mobility; nonlinear distortion; transconductance; Band pass filters; CMOS technology; Capacitance; Capacitors; Degradation; Frequency; Linearity; MOSFET circuits; Performance analysis; Transconductance;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.551906
Filename :
551906
Link To Document :
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