Title :
Kinetic model for degradation of light-emitting diodes
Author :
Chuang, Shun-Lien ; Ishibashi, Akira ; Kijima, Satoru ; Nakayama, Norikazu ; Ukita, Masakazu ; Taniguchi, Satoshi
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
We present a kinetic model for the optical output degradation of light-emitting diodes based on the carrier-recombination enhanced defect motion. Our model leads to analytical solutions and universal curves for the optical output power and the defect density as a function of the normalized aging time with the initial quantum efficiency as the determining parameter. The theoretical results explain very well the time dependence of the II-VI light-emitting diodes under constant current aging condition. The faster aging rate with increasing bias current or temperature is also investigated both experimentally and theoretically, resulting in a very good agreement. Our model provides a quantitative description of the light-emitting diode aging characteristics for compound semiconductors in the presence of electron-hole recombination-enhanced defect generation
Keywords :
ageing; electron-hole recombination; kinetic theory; life testing; light emitting diodes; optical testing; semiconductor device models; semiconductor device testing; II-VI light-emitting diodes; analytical solutions; carrier-recombination enhanced defect motion; compound semiconductors; constant current aging condition; defect density; electron-hole recombination-enhanced defect generation; increasing bias current; initial quantum efficiency; kinetic model; light-emitting diode degradation; normalized aging time; optical output degradation; optical output power; time dependence; universal curves; Aging; Analytical models; Character generation; Degradation; Kinetic theory; Light emitting diodes; Power generation; Radiative recombination; Spontaneous emission; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
