DocumentCode
1547360
Title
Effects of carrier transport on the L-I characteristics of QW lasers in the presence of spatial hole burning
Author
Alam, Muhammad A.
Author_Institution
Lucent Lab., AT&T Bell Labs., Murray Hill, NJ, USA
Volume
33
Issue
6
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
1018
Lastpage
1024
Abstract
In this paper, we study the effects of carrier transport and carrier capture on the linearity of the light-current characteristics of a semiconductor laser using an analytically solvable model. We include various physical processes within the model and study how they affect laser linearity. The technique used shows how to integrate the photon and electron transport within a single model, and the conclusions reveal some interesting aspects of semiconductor laser characteristics
Keywords
carrier mobility; laser theory; optical hole burning; quantum well lasers; semiconductor device models; L-I characteristics; QW lasers; analytically solvable model; carrier capture; carrier transport effects; electron transport; laser linearity; light-current characteristics; physical processes; semiconductor laser characteristics; spatial hole burning; Analytical models; Gas lasers; Laser modes; Laser theory; Leakage current; Linearity; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.585490
Filename
585490
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