Title :
High-efficiency and low-distortion directly-ion-implanted GaAs power MESFETs for digital personal handy-phone applications
Author :
Lai, Yeong-Lin ; Chang, Chun-Yen ; Chun-Yen Chang ; Tai, M.C. ; Liu, T.H. ; Wang, S.P. ; Chuang, K.C. ; Lee, C.T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz /spl pi//4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2 % and an adjacent channel leakage power (P/sub adj/) of -58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.
Keywords :
III-V semiconductors; UHF field effect transistors; cellular radio; digital radio; electric distortion; gallium arsenide; ion implantation; power MESFET; power field effect transistors; quadrature phase shift keying; /spl pi//4-shifted QPSK; 1.9 GHz; 2.2 V; 57.2 percent; GaAs; GaAs power MESFET; Personal Handy-phone System; UHF MESFET; digital wireless PHS application; direct ion implantation technology; fabrication process; high-efficiency; low-distortion device; quadrature phase shift keying; Batteries; Costs; Fabrication; Gallium arsenide; Ion implantation; MESFETs; Phase modulation; Quadrature phase shift keying; Telephone sets; Voltage;
Journal_Title :
Electron Device Letters, IEEE
