Title :
Integrated enhancement- and depletion-mode FET´s in modulation-doped Si/SiGe heterostructures
Author :
Ismail, K. ; Chu, J.O. ; Arafa, M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We present results of enhancement and depletion mode transistors fabricated on the same layer structure of Si/SiGe, without using gate recess. The current in the enhancement mode device is controlled by a p-n junction, while that of the depletion-mode device is controlled by a Schottky barrier. A peak transconductance of 327 mS/mm and 417 mS/mm has been achieved in 0.5-μm gate length depletion and enhancement-mode transistors, respectively.
Keywords :
Ge-Si alloys; Schottky barriers; elemental semiconductors; high electron mobility transistors; semiconductor heterojunctions; semiconductor materials; silicon; 0.5 micron; 327 mS/mm; 417 mS/mm; MODFET; Schottky barrier; Si-SiGe; depletion-mode FET; enhancement-mode FET; integrated FETs; modulation-doped Si/SiGe heterostructures; p-n junction; Electron mobility; Epitaxial layers; FETs; Germanium silicon alloys; MODFET circuits; P-n junctions; Schottky barriers; Silicon germanium; Temperature measurement; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
