• DocumentCode
    1547560
  • Title

    The Pospieszalski noise model and the imaginary part of the optimum noise source impedance of extrinsic or packaged FET´s

  • Author

    Boglione, Luciano ; Pollard, Roger D. ; Postoyalko, Vasil

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Leeds Univ., UK
  • Volume
    7
  • Issue
    9
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    270
  • Lastpage
    272
  • Abstract
    The imaginary part X(Sopt) of the optimum noise impedance for extrinsic or packaged devices is investigated. The analysis modifies the well-known Pospieszalski noise model by applying a series feedback to the source port. A simple expression for X(Sopt ) is developed and is verified for extrinsic and packaged devices with a decreasing level of accuracy. The results give further insights into the way the parasitic inductors Lg and Ls affect the noise performance of the transistor and can help to design low-noise amplifier with simultaneous signal and noise power match at the input port
  • Keywords
    electric impedance; equivalent circuits; field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; Pospieszalski noise model; extrinsic FET; optimum noise source impedance; packaged FET; parasitic inductors; transistor noise performance; Circuit noise; Feedback circuits; Frequency; Impedance; Inductors; Microwave FETs; Microwave amplifiers; Packaging; Semiconductor device noise; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.622535
  • Filename
    622535