Title :
High-performance Ga0.51In0.49P/GaAs airbridge gate MISFET´s grown by gas-source MBE
Author :
Lin, Yo-Sheng ; Lu, Shey-Shi ; Wang, Yo-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/1997 12:00:00 AM
Abstract :
Ga0.51In0.49P/GaAs MISFET´s, in which Ga0.51In0.49P insulating layer was inserted between the gate metal and the channel layer, were compared with MESFET´s experimentally and theoretically in terms of DC and microwave performance. Devices performance were evaluated by varying the thickness of the insulating layer. Wide and flat characteristics of gm, gt, and fmax versus drain current (or gate voltage) together with a high maximum current density (above 610 mA/mm) were achieved for devices with insulating layer thickness of 50 mn and 100 mm. Moreover, the maximum values of Jt´s and fmax ´s for a 1-μm gate length device both occurred when t was between 50 and 100 mn. We also observed that parasitic capacitances and gate leakage currents were minimized by using the airbridge gate structure, and thus high-frequency and breakdown characteristics were greatly improved, These results demonstrate that Ga0.51In0.49P/GaAs airbridge gate MISFET´s with insulating layer thickness between 50 and 100 mn were very suitable for microwave high-power device applications
Keywords :
III-V semiconductors; MISFET; capacitance; chemical beam epitaxial growth; current density; electric breakdown; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; 1 micron; 50 to 100 nm; DC performance; GSMBE; Ga0.51In0.49P insulating layer; Ga0.51In0.49P-GaAs; airbridge gate MISFET; breakdown characteristics; gas-source MBE; gate leakage currents; high-frequency characteristics; insulating layer thickness; microwave high-power device applications; microwave performance; parasitic capacitances; Current density; Electric breakdown; Gallium arsenide; Insulation; Leakage current; Linearity; MESFETs; Microwave devices; Parasitic capacitance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
