Title :
Numerical analysis of a PbTiO3 ferroelectric thin-film infrared optical diode
Author :
Chen, F.Y. ; Fang, Y.K. ; Shu, C.Y. ; Chen, J.R.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1997 12:00:00 AM
Abstract :
A thin PbTiO3-n-p+ silicon diode has been developed, in which the conductivity increases with the infrared light power. The infrared-sensitive part consists of PbTiO3 ferroelectric thin film deposited by RF sputtering. The diode has smaller heat capacity compared with other conventional infrared sensors because the tunneling current is allowed through the PbTiO3 layer so that the PbTiO3 film thickness can be thinned. Numerical analysis of the operational mechanism, such as the effects of infrared light power on the depletion layer width, n-p+ junction voltage, surface depletion region voltage drop, and voltage drop across the thin PbTiO3 film, are reported in detail. Furthermore, some experimental measurements, such as the effects of infrared light power on current-voltage (I-V) curves and the dielectric constant of PbTiO3 film, are compared with the theoretical analysis
Keywords :
ferroelectric devices; ferroelectric thin films; infrared detectors; lead compounds; numerical analysis; permittivity; photodiodes; pyroelectric detectors; sputter deposition; I-V curves; PbTiO3 ferroelectric thin-film infrared optical diode; PbTiO3 film thickness; PbTiO3-Si; PbTiO3-n-p+ Si diode; RF sputtering; Si; depletion layer width; dielectric constant; heat capacity; infrared light power effects; infrared sensors; n-p+ junction voltage; numerical analysis; operational mechanism; surface depletion region voltage drop; tunneling current; Conductivity; Diodes; Ferroelectric materials; Infrared heating; Infrared sensors; Numerical analysis; Radio frequency; Silicon; Sputtering; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
