A physics-based, dynamic thermal impedance model for SOI MOSFET´s

Author

Brodsky, Jonathan S. ; Fox, Robert M. ; Zweidinger, David T. ; Veeraraghavan, Surya

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

44

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

957

Lastpage

964

Abstract

A physics-based compact analytical expression for the thermal impedance of SOI MOSFET´s is presented. This new model extends the steady-state thermal model of Goodson and Flik (1992) to allow for transient and ac analyses, while improving self-consistency for large devices. The modified steady-state model compares favorably to measurements. Using the software package Thermal Impedance Pre-Processor (TIPP), a multiple-pole circuit can be fitted to the thermal-impedance model. The new model is compared to three-dimensional (3-D) ANSYS transient simulations with good results. The thermal-equivalent circuit is used in conjunction with a modified version of SOISPICE to give efficient electrothermal simulations in the dc and transient regimes

Keywords

MOSFET; SPICE; equivalent circuits; semiconductor device models; silicon-on-insulator; thermal resistance; transient analysis; SOI MOSFET; SOISPICE; Thermal Impedance Pre-Processor; ac analysis; dc regime; electrothermal simulations; multiple-pole circuit; physics-based dynamic thermal impedance model; software package; steady-state thermal model; thermal-equivalent circuit; three-dimensional ANSYS transient simulations; transient analysis; Circuit simulation; Electrothermal effects; Impedance; MOSFET circuits; Parameter extraction; Software packages; Steady-state; Thermal conductivity; Thermal resistance; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.585551

Filename

585551