Title :
Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films
Author :
Sakakibara, Kiyohiko ; Ajika, Natsuo ; Hatanaka, Masahiro ; Miyoshi, Hirokazu ; Yasuoka, Akihiko
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
6/1/1997 12:00:00 AM
Abstract :
Time-decay stress-induced leakage current (SILC) has been systematically investigated for the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress. From the three viewpoints of the reproducibility of the-current component for the gate voltage scan, the change of oxide charge during the gate voltage scan, and the resistance of the current component to thermal annealing, it has been found that time-decay stress-induced leakage current is composed of five current components, regardless of stress type. Trap models corresponding to each current component have been proposed. In addition, it has also been proven that holes generate the electron traps related to one of those current components
Keywords :
MOSFET; dielectric thin films; electric breakdown; electron traps; hot carriers; leakage currents; semiconductor device models; semiconductor-insulator boundaries; silicon compounds; tunnelling; Fowler-Nordheim stress; MOS transistors; SiO2 films; SiO2-Si; electron traps; gate voltage scan; oxide charge; stress-induced leakage current components; substrate hot-hole stress; thermal annealing resistance; time-decay stress-induced leakage current; trap models; Annealing; Current measurement; Electric breakdown; Electron traps; Hot carriers; Leakage current; Substrates; Thermal resistance; Thermal stresses; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
