Title :
Lateral field emission diodes using SIMOX wafer
Author :
Park, Jung-Hyeon ; Lee, Hyung-Il ; Tae, Heung-Sik ; Huh, Jeung-Soo ; Lee, Jung-Hee
Author_Institution :
Sch. of Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
fDate :
6/1/1997 12:00:00 AM
Abstract :
Lateral field emission diodes were fabricated by using separation by implantation of oxygen (SIMOX) wafer and their current-voltage characteristics (I-V) were analyzed. Applying conventional photolithography and local oxidation of silicon (LOGOS) process, we fabricated single-crystalline lateral silicon field emitters with very sharp cathode and anode tips and very short cathode to anode spacing ranging from 0.3 to 0.8 μm as well. Two different types of tips, tapered and wedge-shaped emitters, were typically formed according to oxidation time. The turn-on voltages for both types of diodes were as low as 22~25 V and the emission currents were as high as 6 μA/tip at voltages of 35~38 V. From the Fowler-Nordheim (FN) equation, field emitting area (A) and field enhancement factor (β) for both types of diodes were estimated to explain the low turn-on voltages and the high emission currents
Keywords :
SIMOX; diodes; electron field emission; elemental semiconductors; oxidation; photolithography; silicon; vacuum microelectronics; 0.3 to 0.8 micron; 22 to 25 V; 35 to 38 V; Fowler-Nordheim equation; I-V characteristics; LOGOS process; SIMOX wafer; Si; anode tips; cathode tips; current-voltage characteristics; emission currents; fabrication; field emitting area; field enhancement factor; lateral Si field emitters; lateral field emission diodes; local oxidation; oxidation time; photolithography; tapered emitters; turn-on voltages; wedge-shaped emitters; Anodes; Cathodes; Diodes; Electrodes; Fabrication; Lithography; Oxidation; Silicon; Tungsten; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
